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Toshiba Corp. Kawasaki‐shi Jpn | 論文
- A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications
- Refractory WN_x/W Self-Aligned Gate GaAs Power Metal-Semiconductor Field-Effect Transistor for 1.9-GHz Digital Mobile Communication System Operating with a Single Low-Voltage Supply
- Fully Differential Direct-Conversion Receiver for W-CDMA Reducing DC-Offset Variation(Analog Circuit and Device Technologies)
- Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation (Special Issue on Heterostructure Electron Devices)
- Characteristics of GaAs HEMTs with Flip-Chip Interconnections(Amplifier)(Recent Trends on Microwave and Millimeter Wave Application Technology)
- Characteristics of GaAs HEMTs with Flip-Chip Interconnections
- A Compact 40GHz MMIC Power Amplifier with Improved Power Stage Design(Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
- ASCA Observation of Two Ultraluminous IRAS Galaxies : IRAS 15307+3252 and IRAS 20460+1925
- Design Study on RF Stage for Miniature PHS Terminal (Special Issue on Microwave Devices for Mobile Communications)
- A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs (Special Issue on Low-Power and High-Speed LSI Technologies)
- Gate Current Control Method by Pull-Down FET's for 0-28dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
- A Buried-Channel WN_x/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System
- Buried-Channel WN_x/W Self-Aligned GaAs MESFET Process with Selectively Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications
- Probing Warm-Hot Intergalactic Medium Associated with the Virgo Cluster Using an Oxygen Absorption Line
- A 1.55-μm Hybrid Integrated Wavelength-Converter Module Using Spot-Size Converter Integrated Semiconductor Optical Amplifiers on a Planar-Lightwave-Circuit Platform (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- A 1.55-μm Hybrid Integrated Wavelength-Converter Module Using Spot-Size Converter Integrated Semiconductor Optical Amplifiers on a Planar-Lightwave-Circuit Platform (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- A Practical Design Consideration for Coupled-Resonator Laminated Band Elimination Filter Fabricated with LTCC of High Dielectric Constant (特集:論文誌C発刊30周年記念)
- A Study of a Laminated Band Elimination Filter Comprising Coupled-Line Resonators Using Low Temperature Co-Fired Ceramics (Special Issue on Microwave and Millimeter Wave Technology)
- Electron microscopical and immunohistochemical studies on the localization of cathepsin B, D, L, LAMP-1 and μ-calpain in developing hair follicles
- Localization of Cathepsins B, D, L, LAMP-1 and μ-Calpain in Developing Hair Follicles