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Sumitomo Electric Ind. Ltd. Yokohama Jpn | 論文
- SiO_2 Surface and SiO_2/Si Interface Topography Change by Thermal Oxidation : Semiconductors
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
- Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
- New Dry Surface-Imaging Process for X-Ray Lithography
- Effect of Anion in Developer on Dissolution Characteristics of Photoresist : Resist Material and Process
- Effect of Anion in Developer on Dissolution Characteristics of Photoresist
- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- Photon-Stimulated Ion Desorption Measurement of Organosilicon Resist Reactions in Extreme Ultraviolet Lithography
- 0.10 μm Dense Hole Pattern Formation by Double Exposure Utilizing Alternating Phase Shift Mask Using KrF Excimer Laser as Exposure Light
- Simple Method for Resist Critical Dimension Prediction
- Scanning Tunneling Microscopy of Initial Stages of GaAs Heteroepitaxy on Lattice-Mismatched Substrates
- In-situ After-treatment Using Low-energy Dry-etching with a CF4/O2 Gas Mixture to Remove Reactive Ion Etching Damage
- Using Auger Electron Spectroscopy for Chemical Analysis of Plasma Damage Induced by Reactive Ion Etching of SiO_2
- Low-energy Ion Scattering Measurement of Near-surface Damage Induced by the SiO_2 Dry-Etching Process
- Closely Spaced Independently Addressable Dual-Beam Visible Lasers with Strained GaInP Quantum Wells