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School Of Electrical Engineering Seoul National University | 論文
- Self-Aligned Offset Gated Poly-Si TFTs by Employing a Photo Resistor Reflow Process
- In-Situ Doped CMOS Polysilicon Thin Film Transistors
- Polysilicon Thin Film Transistors with PN Junction Gate
- Effects of Hydrogenation Treatment with Various Multi-channel Poly-Si TFT
- Viewing Angle Enhancement of Three-Dimension/Two-Dimension Convertible Integral Imaging Display Using Double Collimated or Noncollimated Illumination
- Formation of Reliable HfO_2/HfSi_xO_y Gate-Dielectric for Metal-Oxide-Semiconductor Devices
- Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back
- Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure
- Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure
- Dielectric Study on Ferri-like Ordering in Antiferroelectric Liquid Crystals during the Field-Induced Phase Transition
- Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memory(Session4A: Nonvolatile Memory)
- Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memory(Session4A: Nonvolatile Memory)
- Improving the Cell Characteristics Using SiN Liner at Active Edge in 4G NAND Flash
- Establishing read operation bias schemes for 3-D pillar-structure flash memory devices to overcome paired cell interference (PCI) (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Establishing read operation bias schemes for 3-D pillar-structure flash memory devices to overcome paired cell interference (PCI) (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices(Novel MOSFET Structures,Fundamentals and Applications of Advanced Semiconductor Devices)
- Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles(Session 7A Silicon Devices IV,AWAD2006)
- Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles(Session 7A Silicon Devices IV,AWAD2006)
- Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles
- Polarization-Insensitive Discrimination of Strain and Temperature Based on Long-Period Fiber Grating Inscribed on High-Birefringent Fiber Ended with Faraday Rotator Mirror