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Rwcp Optical Interconnection Fujitsu Laboratory | 論文
- 1.3 μm InGaAs/InAlGaAs Strained Quantum Well Lasers on InGaAs Ternary Substrates
- In_Ga_AS/InAlGaAs/InGaP Strained Double Quantum Well Lasers on In_Ga_As Ternary Substrate
- High-Reflectivity In_Ga_As/In_Al_As Ternary Mirrors for 1.3 μm Vertical-Cavity Surface-Emitting Lasers Grown on GaAs
- Low Threshold and Record High TO (140K) Long Wavelength Strained Quantum Well Lasers on InGaAs Ternary Substrates