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Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institute of Technology | 論文
- Single Electron Memory Devices Based on Silicon Nanocrystals Fabricated by Very High Frequency Plasma Deposition
- Room Temperature Single-Electron Narrow-Channel Memory with Silicon Nanodots Embedded in SiO_2 Matrix
- Enhanced Dielectric Properties in SrTiO_3/BaTiO_3 Strained Superlattice Structures Prepared by Atomic-Layer Metalorganic Chemical Vapor Deposition