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Ntt Basic Research Laboratories | 論文
- Magnetic Excitations in Superconducting YBa_2Cu_3O_ Crystals Studied by Neutron Inelastic Scattering
- Three-Dimensional Nanofabrication with 10-nm Resolution
- Effect of Chelating Agents on High Resolution Electron Beam Nanolithography of Spin-Coatable Al_2O_3 Gel Films
- Preparation and Characterization of a Microfabricated Oxide-on-Oxide Catalyst of α-Sb_2O_4/VSbO_4
- Depth Profiling of As in an AlAs/GaAs Multilayer by a New Laser-Induced Sputtered Neutral Mass Spectrometry System
- Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
- A Multiple Wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) Array for Optical Interconnection
- Thermal Analysis of Laser-Emission Surface-Normal Optical Devices with a Vertical Cavity
- Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
- Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
- Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
- The Effect of Chlorine on Silicon Oxidation : Simulation based on the Interfacial Silicon Emission Model
- Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
- Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
- Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
- Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
- Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
- Unpinning of the Fermi level at clean (111)A surfaces of heavily Si-doped In_Ga_As thin films epitaxially grown on InP substrates
- 22aXF-13 LT-STM study of the surface Fermi level position of MBE-grown In_Ga_As on (001) and (111)A oriented InP substrates
- 親密度別単語了解度試験用音声データセット2007(FW07)の作成(福祉と知能・情動・認知障害,福祉と音声処理,一般)