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Nanotechnology Research Center Canon Inc. | 論文
- New Ellipsometric Approach to Critical Dimension Metrology Utilizing Form Birefringence Inherent in a Submicron Line-and-Space Pattern
- Application of Large-Scale Binary Optical Elements to High-Resolution Projection Optics Used for Microlithography
- Analysis of Overlay Accuracy in 0.14μm Device Fabrication using Synchrotron Radiation Lithography
- Alignment Mark Optimization to Reduce Tool- and Wafer-Induced Shift for XRA-1000
- Critical Dimension Control in Synchrotron Radiation Lithography Using a Negative-Tone Chemical Amplification Resist
- Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si_Ge_/Ge/Si_Ge_x Heterostructure
- High Hole Mobility in Modulation-Doped and Strain-Controlled p-Si_Ge_/Ge/Si_Ge_ Heterostructures Fabricated Using Molecular Beam Epitaxy
- Feasibility Study on Immersion System Using High-Index Materials
- High-Precision Binary Optical Element Fabricated by Novel Self-Aligned Process
- Characteristics of Boron Diffusion from BSG Film and the Formation of Ultra-Shallow, Low-Resistance Junctions
- Ultra-Shallow and Abrupt Boron Profiles in Si by δ-Doping Technique
- Critical Dimension Control in Synchrotron Radiation Lithography Using a Negative-Tone Chemical Amplification Resist