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Nanoscale Quantum Device Research Center, Korea Electronics Technology Institute | 論文
- A Low-Power Silicon-on-Insulator Photodetector with a Nanometer-Scale Wire for Highly Integrated Circuit
- Optical Characteristics of Responsivity-Enhanced InGaAs/InP Heterojunction Phototransistors
- Design and Characterization of $1\times 128$ In0.53Ga0.47As/InP Photodetector Linear Array with Improved Optical Sensitivity and Shunt Resistance
- Design and Optical Characterization of Passive Pixel with Sensitivity-Improved InGaAs/InP Phototransistors Considering Light-Dependent Shunt Resistance for Near Infrared Imaging Applications
- A Low-Power Silicon-on-Insulator Photodetector with a Nanometer-Scale Wire for Highly Integrated Circuit