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Nano-device Research Center, Korea Institute of Science and Technology | 論文
- Enhanced Optical Properties of High-Density (>10^/cm^2) InAs/AlAs Quantum Dots by Hydrogen Passivation
- Electrical Properties of InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetectors
- Structural and optical properties of InGaAs/GaAs quantum dots using atomic layer epitaxy technique for the application of optical Communication (先端デバイスの基礎と応用に関するアジアワークショップ)
- Structural and optical properties of InGaAs/GaAs quantum dots using atomic layer epitaxy technique for the application of optical communication (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- High-Response i-InAs/n-GaAs Quantum-Dot Infrared Photodetector with No Current Blocking Barrier
- Electrical Characterization of GaAs/AlGaAs Multi-Quantum Wells for Quantum Cascade Laser
- Effects of thermal annealing on optical and structural properties of 1.3 μm digital-alloy InGaAlAs MQW (先端デバイスの基礎と応用に関するアジアワークショップ)
- Effects of thermal annealing on optical and structural properties of 1.3 μm digital-alloy InGaAlAs MQW (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Electrical Characterization of GaAs/AlGaAs Multi-Quantum Wells for Quantum Cascade Laser
- Electrical Properties of InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetectors
- High-Response i-InAs/n-GaAs Quantum-Dot Infrared Photodetector with No Current Blocking Barrier