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NTT Photonics Laboratories | 論文
- High-Speed Avalanche Photodiode with a Neutral Absorption Layer for 1.55 μm Wavelength
- New Stacked Metal--Insulator--Metal Capacitor with High Capacitance Density for Future InP-Based ICs
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
- Double-Recess Structure with an InP Passivation Layer for 0.1-μm-Gate InP HEMTs( Heterostructure Microelectronics with TWHM2003)
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMTs and Its Correlation with Impact Ionization
- InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond (Special Issue on High-Frequency/speed Devices in the 21st Century)
- A 1.3-μm Optical Transceiver Diode Module Using Passive Alignment Technique on a Si Bench with a V-Groove
- A Highly Linearized MMIC Amplifier Using a Combination of a Newly Developed LD-FET and D-FET Simultaneously Fabricated with a Self-Alignment/Selective Ion-Implantation Process(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and
- A High-Efficiency Linear Power Amplifier with a Novel Output Power Control Technique(Special Issue on Microwave and Millimeter-Wave Module Technology)
- A Novel Optical Control Technique Using Tunable Inductance Circuits
- Low-Driving-Voltage Electro-Optic Modulator With Novel KTa_Nb_xO_3 Crystal Waveguides
- Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High-Resolution Scanning Electron Microscopy Observation of Electrochemical Etching in the Formation of Gate Grooves for InP-Based Modulation-Doped Field-Effect Transistors
- System-Level Compensation Approach to Overcome Signal Saturation, DC Offset, and 2nd-Order Nonlinear Distortion in Linear Direct Conversion Receiver (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
- InP-based High-speed Transistors and Their IC Applications
- Monolithic Integration of Resonant Tunneling Diodes, Schottky Barrier Diodes and 0.1-$\mu$m-gate High Electron Mobility Transistors for High-Speed ICs
- Purification and Characterization of Goose Type Lysozyme from Cassowary (Casuarlus casuarius) Egg White
- SCFL-Compatible 40-Gbit/s RTD/HEMT Selector Circuit