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NTT Opto-Electronics Laboratories | 論文
- Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- New Microwave Launcher for Producing ECR Plasmas without Window Contamination I. : Excitation of Electron Cyclotron Wave
- Static Fatigue Reliability of Plastic Split Alignment Sleeve for Single-Mode Optical Connection (Special Issue on Electromechanical Devices and Their Materials)
- TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
- Design and Performance of Delivery and Coupling Switch Board for Large Scale Optical Path Cross-Connect System
- High Purity Liquid Phase Epitaxial Growth of InP
- Ultrahigh Purity Liquid Phase Epitaxial Growth of GaAs
- Effective Techniques for Ultra-High Purity Liquid Phase Epitaxial Growth of Ga_In_As
- Q-Factor-Based Level Design for Photonic ATM Switches (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Q-Factor-Based Level Design for Photonic ATM Switches (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Laser-Induced Oxygen Control in Small Region of YBa_2Cu_3O_y Poly- and Single Crystals, Observed by Microscopic IR Reflection
- Microscopic IR-Reflection Study of Oxygen Doping Effect Induced by Laser Irradiation on YBa_2Cu_3O_y, Surface
- A Rutherford Backscattering Spectroscopic Study of the Aluminum Antimonide Oxidation Process in Air
- Direct Growth of AlGaAs/GaAs Single Quantum Wells on GaAs Substrates Cleaned by Electron Cyclotron Resonance (ECR) Hydrogen Plasma
- Surface Currents in InP/InGaAs Heterojunction Bipolar Transistors Produced by Passivation Film Formation
- InAlAs/InGaAs Heterojunction Bipolar Transistors with an n-doped InGaAs Spacer
- Measurement of the Energy Spread of the Cold Relativistic Electron Beam Using Thomson Backscattering of a High Power CO_2 Laser
- Direct Measurement of the Energy Distribution of an Intense Relativistic Electron Beam
- ZnCdSe/ZnSe Quantum-Well Laser Diode on a (711)A GaAs Substrate