スポンサーリンク
NTT LSI laboratories | 論文
- A Unified Analysis on Hot Carrier Generation in p-Channel and n-Channel MOSFET's : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography
- A Rutherford Backscattering Spectroscopic Study of the Aluminum Antimonide Oxidation Process in Air
- InAlAs/InGaAs Heterojunction Bipolar Transistors with an n-doped InGaAs Spacer
- Citric Acid Etching of ZnSe Surface and Application to the Homoepitaxy by Molecular Beam Epitaxy
- Atomically Flat GaAs(001) Surfaces Obtained by High-Temperature Treatment with Atomic Hydrogen Irradiation
- Reduction of Beam Divergence Angle by Low-Refractive-Index Layers Introduced to Real-Refractive-Index-Guided GaAlAs High-Power Laser Diodes
- 120 mW High-Power Low-Noise GaAlAs Multiple-Quantum-Well Laser Diodes with a New Real Refractive Index Guided Self-Aligned Structure
- Effects of photo- and Auger Electron Scattering on Resolution and Linewidth Control in SR Lithography : Lithography Technology
- Effects of Photo- and Auger Electron Scattering on Resolution and Linewidth Control in SR Lithography
- Electrical and Photoluminescence Properties of Iodine-Doped ZnSe Films Grown by Low-Pressure MOVPE : Semiconductors and Semiconductor Devices
- Photoluminescence Properties of Nitrogen-Doped ZnSe Films Grown by Low-Pressure MOVPE : Semiconductors and Semiconductor Devices
- Photoluminescence Properties of Li-Doped ZnSe Films Grown by Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Structure of Trimer-Type Isocyanate Hardening Agents and Reactivity of Their Isocyanate Group
- Estimation of Reactivity of Isocyanate Groups by Calculation and Magnetochemical Measurement
- Temperature Dependence of Piezoelectric Constant of 0.5PbNi_Nb_O_3-0.5Pb(Zr, Ti)O_3 Ceramics in the Vicinity of Morphotropie Phase Boundary
- Piezoelectric Properties of PbNi_Nb_O_3-PbTiO_3-PbZrO_3 Ceramics
- Soft X-Ray Reduction Lithography Using Multilayer Mirrors : X-Ray Lithography
- Soft X-Ray Reduction Lithography Using Multilayer Mirrors
- 10 Gbit / s, 35mV Decision IC Using 0.2μm GaAs MESFETs (Special Section of Letters Selected from the '92 Fall Conference and the '93 Spring Conference)