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NTT Interdisciplinary Research Laboratories | 論文
- Evaluation of Large-Area Mo/Si Multilayer Soft X-Ray Mirrors Fabricated by RF Magnetron Sputtering
- Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode
- A Compact, High-Efficiency, High-Power DC-DC Converter
- Wavelength-Multiplexed Holographic Recording in Cerium Doped Strontium Barium Niobate by Using Tunable Laser Diode
- High-Density Optical Storage with Multiplexed Holographic Recording Method
- In Situ Observation of Surface Morphology Evolution Corresponding to Reflection High-Energy Electron Diffraction Oscillation during Molecular Beam Epitaxy of Gallium Arsenide
- Patterning-Assisted Control for Ordered Arrangement of Atomic Steps on Si(111) Surfaces
- In Situ Observation of Monolayer Steps during Molecular Beam Epitaxy of Gallium Arsenide by Scanning Electron Microscopy
- Thermal Contraction of Drawn Polyethylene Film I. An Empirical Equation for Temperature Dependence of Thermal Stress
- Profile-Imaging of Wavy Cleavage Surface of Bi_2Sr_2CaCu_2O_y by High-Resolution Transmission Electron Microscopy
- Photorefractive Properties of Ce-Doped Strontium Barium Niobate Single-Crystal Fibers at 830 nm
- Mixed Mode Circuit Simulation Using Dynamic Network Separation and Selective Trace (Special Section on the 6th Karuizawa Workshop on Circuits and Systems)
- Analog Free-Space Optical Switch Structure Based on Cascaded Beam Shifters (Special Issue on Photonic Switching Technologies)
- An Oversampling ADC with Non-linear Quantizer for PCM CODEC
- Supply and Removal of Small Amounts of Liquid Using a Robot Mechanism
- Supply and Removal Characteristics of Oil in Optical Waveguide for Automated Optical Main-Distributing-Frame System (Special Issue on Photonic Switching Technologies)
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Semiconductor Lightning Surge Protection Devices for Telecommunication Equipment (Special Issue on Discharge and Electromagnetic Interference)
- Influence of the Nonequilibrium Superconductivity Effect on the Quasiparticle Current-Voltage Characteristics of Intrinsic Tunnel Josephson Junctions