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Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea | 論文
- Fabrication of Highly Dense Ru Thin Films by High-Temperature Metal-Organic Chemical Vapor Deposition with NH3 Gas as Ru Oxidation Suppressing Agent
- Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr,Ti)O3 Thin Films on Structural Stabilities of Hybrid Pt/IrO2/Ir Stack and Single-Layer Ir Bottom Electrodes
- Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition