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Materials Department and Electrical Engineering Department, University of California | 論文
- Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix
- High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
- Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
- Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
- Plane Dependent Growth of GaN in Supercritical Basic Ammonia
- Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
- Compositional Dependence of Nonpolar m-Plane In_xGa_N/GaN Light Emitting Diodes
- Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
- Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
- Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching
- High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
- Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
- Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers
- Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
- Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
- Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl_2O_4 by Metalorganic Chemical Vapor Deposition
- Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate
- MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors
- The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganie Chemical Vapor Deposition
- CK-1-1 Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs