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Led Business Development Department Mitsubishi Cable Industries Ltd. | 論文
- Internal Quantum Efficiency of Nitride-based Light-Emitting Diodes
- Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
- Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based LEDs Fabricated on Patterned Sapphire Substrates
- Recombination Dynamics of Self-Trapped Excitons in the High-Efficient Blue LEDs under Reverse Bias Condition
- Effect of High Current Injection on the Blue Radiative Recombination in InGaN Single Quantum Well Light Emitting Diodes
- Radiative Recombination of Hot Electrons in InGaN Single Quantum Well Blue LEDs
- High Output Power Near-Ultraviolet and Violet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Using Metalorganic Vapor Phase Epitaxy(LED Lighting Technologies)