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Laboratoire Priam | 論文
- Mass Spectrometry Detection of SiH_m and CH_m Radicals from SiH_4-CH_4-H_2 RF Discharges under High Temperature Deposition Conditions of Silicon Carbide ( Plasma Processing)
- Surface Reaction Kinetics of CH 3 in CH 4 RF Discharge Studied by Time-Resolved Threshold Ionization Mass Spectrometry