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Kyushu Institute of Technology | 論文
- 入力ベクトルからの信号値を正当化する最小キューブ抽出(テスト設計)(VLSIの設計/検証/テスト及び一般)(デザインガイア2004-VLSI設計の新しい大地を考える研究会)
- UNSUPERVISED TEXTURE SEGMENTATION BASED ON MULTISCALE STOCHASTIC MODELING IN WAVELET DOMAIN
- High Launch Switching Activity Reduction in At-Speed Scan Testing Using CTX : A Clock-Gating-Based Test Relaxation and X-Filling Scheme
- 24aC3 Behavior of Fine Bubbles in Front of the Solidifying Interface of Solution
- Interfacial Properties of Molten Low Carbon Steel Containing Ti, Nb or B in Relation to the Behavior of Fine Particles in Continuous Casting Process
- Density of Liquid IF Steel Containing Ti
- The effect of oxygen on the Marangoni flow of molten silicon
- A new carrier frequency offset and I/Q imbalance compensation for MIMO OFDM (モバイルマルチメディア通信)
- 3P-226 転写因子制御領域におけるモチーフ解析(ゲノム生物学-ゲノム解析,第47回日本生物物理学会年会)
- Geometry of Banach spaces and norms of $\pm$ matrices
- Some characterizations of uniformly non-square Banach spaces(Nonlinear Analysis and Convex Analysis)
- Uniform convexity, uniform non-squareness and von Neumann-Jordan constant for Banach spaces(Nonlinear Analysis and Convex Analysis)
- On Clarkson-Boas-type inequalities(Nonlinear Analysis and Convex Analysis)
- Void free at Interface of the SiC Film and Si Substrate
- Conversion of Si(100) to Si_Ge_xC_y Alloy by Hydrogen Plasma Containing Ge and C Species
- Growth of 3C-SiC on Si Substrate with Ge_C_ Buffer Layer : Semiconductors
- Influence of Oxygen on Formation of Hollow Voids at SiC/Si Interface : Semiconductors
- Fabrication of Nanoscale Cubic SiC Particle Film
- Compositional Changes of SiC/Si Structure during Vacuum Annealing
- Activation Energy of Nanoscale 3C-SiC Island Growth on Si Substrate