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Kyushu Institute of Technology | 論文
- Influence of SiC Cover Layer of Si Substrate on Properties of Cubic SiC Films Prepared by Hydrogen Plasma Sputtering
- Infrared Absorption Properties of Nanocrystalline Cubic SiC Films
- Behaviors of Carbon at Initial Stages of SiC Film Grown on Thermally Oxidized Si Substrate
- Observation of the Formation Processes of Hollow Voids at the Interface between SiC Film and Si Substrate
- Low-Temperature Growth of Oriented Silicon Carbide on Silicon by Reactive Hydrogen Plasma Sputtering Technique
- Study of Hydrogen Ion Bombardment Effect on the Growth of Si:H Films Prepared by Hydrogen Plasma Sputtering of Silicon
- Temperature-Dependent Reaction of rf Hydrogen Plasma with Silicon
- Special Issue on Knowledge-Based Software Engineering
- Evaluation of subjective communication quality of optical mobile communication systems by mean opinion score
- Analysis of Motion of Body Center during Human Stair Gait Using Force Plate
- Bioequivalence of Marketed Transdermal Delivery Systems for Tulobuterol(Biopharmacy)
- Critical Current Characteristics in Superconducting Y-Ba-Cu-O Prepared by the Melt Process
- Thermodynamic Analysis of Phase Equilibria in the Fe-Nb-P Ternary System
- Blind Adaptive Equalizer Based on CMA and LMS Algorithm(Fundamental Theories)
- Particle-initiated Breakdown Characteristics around Spacer under Lightning Impulse Voltage Superimposed on Pre-stressed DC
- Influence of Sensor Location and Tank Size on Determination of Discharge Type Based on PD Electromagnetic Waves Propagation in GIS
- Surge Simulation in Pulse Transformer Model by Numerical Electromagnetic Field Computation
- Wire Particle Motion Behavior and Breakdown Characteristics around Different Shaped Spacers within Diverging Air Gap
- Surge Simulation in Transformer Model by Numerical Electromagnetic Filed Computation
- Influence of Sensor Location on PD Electromagnetic Wave Signal Measured by Internal Sensors in GIS