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Ion Engineering Research Institute Corporation | 論文
- Position-Controlled Si Nanocrystals in a SiO_2 Thin Film Using a Novel Amorphous Si Ultra-Thin-Film "Nanomask" due to a Bio-Nanoprocess for Low-Energy Ion Implantation
- 色素増感太陽電池のブロック層としての高温スパッタTiO_2膜
- X-Ray Photoelectron Spectroscopy Characterization of Diamond Thin Film Surfaces for Electronic Device Application
- Room-Temperature Operation of a Lateral Tunneling Transistor Fabricated by Plane-Dependent Silicon Doping in Nonplanar Epitaxy
- Thermal Stability of Beryllium Atoms in Be δ-Doped GaAs Grown on GaAs(111)A by Molecular Beam Epitaxy
- Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers
- Analysis of Heat-Treated 6H-SiC (0001) Surface Using Scanning Tunneling Microscopy
- Kinetics and Depth Distributions of Oxygen Implanted into Si Analyzed by the Monte Carlo Simulation of Extended TRIM
- Thermoelectric Characteristics of Si/Ge Superlattice Thin Films at Temperatures Less Than 300 K
- Reduction of CO_2 with H_2O on TiO_2(100) TiO_2(110) Single Crystals under UV-irradiation
- Electron Field Emission from Sulfur Ion Implanted Homoepitaxial Diamond Films(Surfaces, Interfaces, and Films)
- Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films
- Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-oriented Substrates
- Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-Oriented Substrates
- Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time Resolved Photoluminescence Spectroscopy
- Quantum-Confined Stark Shift Due to Piezoelectric Effect in InGaAs/GaAs Quantum Wells Growrn on (111)A GaAs
- Characterization of GaAs P-N Structures Grownon GaAs (111) A Substrates Using Controlled All-Silicon Doping
- Influence of the Piezoelectric Effect on the Energy Levels of InGaAs/GaAs Strained Quantum Wells Grown on (311)A GaAs
- Vibrational Response Analysis of Mistuned Bladed Disk
- Optimal Design of Turbine Blade using Sensitivity Analysis