スポンサーリンク
Institute of Material Science, University of Tsukuba | 論文
- The Nature of Reversible Change in M_S Temperatures of Ti-Ni Alloys with Alternating Aging
- Phase Transformation and Crystal Structures of Ti_2Ni_3 precipitates in Ti-Ni Alloys
- Optical Properties of Poly(2,5-dialkoxy-p-phenylenebutadiynylene)
- 分子インプリントポリマーを利用したアトラジンセンサチップ
- Numerical Simulation of Countercurrent Gas-Liquid Flow in a PWR Hot Leg under Reflux Cooling
- Void Fraction in a Four by Four Rod Bundle under a Stagnant Condition
- Efficient Thermal Conversion of Poly(pyridinediylbutadiynylene)s to Nitrogen-containing Microporous Carbon
- Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties
- A Novel Approach for Synthesis of Carbyne by Electroreductive Polymerization of Diiodoacetylene Catalyzed by Ni Complex
- Structural Study of R-Phase in Ti-50.23 at. %Ni and Ti-47.75 at. %Ni-1.50 at. %Fe Alloys
- 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
- Stability of Si(111)√×√R30°-B Surface in Air
- Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process
- Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
- Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron Diffraction
- Temperature Dependence of Boron Adsorption during HBO_2 Irradiation on Si(111) Surface Evaluated by Reflection High-Energy Electron Diffraction
- Synthesis and Characterization of a Novel Linear Conjugated Polymer, Poly(2,5 - didodecyloxy - 1,4 - phenyleneoctatetraynylene)
- Formation Mechanism of Interstitial Hydrogen Molecules in Crystalline Silicon
- Three Different Forms of Hydrogen Molecules in Silicon
- Dependence of the Carrier Concentration Profile at the Si MBE Layer/p-Si Substrate Interface on the Si Substrate Preparation Method