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Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland | 論文
- Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
- Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds