スポンサーリンク
Graduate School Of Advanced Sciences And Matters Hiroshima University | 論文
- Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation
- Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots
- Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell
- Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily Boron-Doped Silicon
- Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using Atomic Force Microsope/Kelvin Probe Technique
- Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
- Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium--Yttrium Mixed Oxide
- Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes
- Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
- Performance Improvement of HfAlOxN n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms
- Self-Assembling Formation of Ni Nanodots on SiO2 Induced by Remote H2 Plasma Treatment and Their Electrical Charging Characteristics
- Characterization of Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots
- Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior
- Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
- X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures
- Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System
- Highly-Crystallized Ge:H Film Growth from GeH