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Fujitsu laboratories LTD. | 論文
- Observation of Exciton Transition in 1.3-1.55μm Band from Single InAs/InP Quantum Dots in Mesa Structure
- ROLE OF MAMMALIAN TISSUES AND INTESTINAL BACTERIA IN N-ACYLATION
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- 電子セラミックスの最先端研究動向と将来展望
- EUVリソグラフィーを用いた70nmピッチCu/ポーラス低誘電率膜デュアルダマシンインテグレーションの基礎検討(配線・実装技術と関連材料技術)
- Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
- Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As_4
- Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
- GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
- Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
- Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
- All-Solid-State, THz Radiation Source Using a Saturable Bragg Reflector in a Femtosecond Mode-Locked Laser
- Ultraviolet picosecond pulses from an all-solid-state Ce : LiSAF master oscillator and Ce : LiCAF power amplifier system
- Growth and Optical Characterization of Cr^YAB and Cr^YGAB Crystal for New Tunable and Self-Frequency Doubling Laser
- Controlled Quantum Confinement Potentials in Self-Formed InGaAs Quantum Dots Grown by Atomic Layer Epitaxy Technique
- Self-Formed In_Ga_As Quantum Dots on GaAs Substrates Emitting at 1.3 μm
- Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
- 分散型共有メモリを用いた高速メッセージ通信システムSURE-SXの研究試作 : 性能評価
- 分散型共有メモリを用いた高速メッセージ通信システムSURE-SXの研究試作 : 通信制御方式
- 分散型共有メモリを用いた高速メッセージ通信システムSURE-SXの研究試作 : システムアーキテクチャー