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Fujitsu Lab. Ltd. Kanagawa Jpn | 論文
- PbTiO_3- and Pb(Zr,Ti)O_3-Covered ZnO Nanorods
- Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
- Phonon Assisted Tunneling and Peak-to-Valley Ratio in a Magnetically Confined Quasi Zero Dimensional InGaAs/InAlAs Resonant Tunneling Diode
- InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Chemical Modification of Multi-walled Carbon Nanotubes (MWNTs) By Vacuum Ultraviolet (VUV) Irradiation Dry Process
- Influence of Growth Mode of Carbon Nanotubes on Physical Properties for Multiwalled Carbon Nanotube Films Grown by Catalystic Chemical Vapor Deposition
- Carbon nanotube technologies for future ULSI via interconnects
- A Resonant-Tunneling Bipolar Transistor (RBT) : A New Functional Device with High Current Gain
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
- A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- Microstructure and Electrical Properties of (Pb, La)(Zr. Ti)O_3 Films Crystallized from Amorphous State by TWO-Step Postdeposition Annealing
- In Situ Observation of Pulsed Laser Doping : Semiconductors and Semiconductor Devices
- Fabrication of Heavily-Doped Polycrystalline Silicon Film Using a Laser-Doping Technique