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Fuculty of Engineering Science, Osaka University | 論文
- Ridge Type Microfabrication by Maskless Ion Implantation of Si into SiO_2 Film
- Chemical Vapor Deposition and Characterization of a Phosphorus-Nitride (P_3N_5) Gate Insulator for an Inversion-Mode InP MISFET : B-6: III-V DEVICE TECHNOLOGY