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Faculty of Science and Technology Meijo University | 論文
- Synthesis and Crystal Structure–Microwave Dielectric Property Relations in Sn-Substituted Ca3(Zr1-xSnx)Si2O9 Solid Solutions with Cuspidine Structure
- Correlation between Device Performance and Defects in GalnN-Based Solar Cells
- High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate
- Study on Efficiency Component Estimation of 405 nm Light Emitting Diodes from Electroluminescence and Photoluminescence Intensities
- Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
- Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
- Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
- GaInN-Based Tunnel Junctions in n--p--n Light Emitting Diodes
- Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes
- Combination of Indium--Tin Oxide and SiO
- Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities
- Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures
- Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
- Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions (Special Issue : Recent Advances in Nitride Semiconductors)
- High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers (Special Issue : Recent Advances in Nitride Semiconductors)
- Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures (Special Issue : Recent Advances in Nitride Semiconductors)
- Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors