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Faculty Of Engineering Musashi Institute Of Technology | 論文
- Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
- Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
- 角度分解光電子分光法による深さ方向組成分析の高精度化の試み
- Electric characteristics of Si_3N_4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces
- XPSを用いたAu/極薄SiO_2界面のバリアハイトの測定(ゲート絶縁膜,容量膜,機能膜及びメモリ技術)
- high-k 膜のXPSによる評価
- ラジカル酸化および熱酸化により形成した極薄シリコン酸化膜中の電子の脱出深さ(プロセスクリーン化と新プロセス技術)
- 13aXC-10 硬 X 線光電子分光の高分解能化・高効率化(吸収分光・MCD・光電子分光, 領域 5)
- Effects of Ultrasound on Extraction of Saponin from Ginseng
- A Proposed Atomic-Layer-Deposition of Germanium on Si Surface
- Pandemonium Problem in Fission-Product Decay Heat Calculations Revisited
- Intelligent Power IC with Partial SOI Structure
- Depth Profile of Various Bonding Configration of Nitrogen Atoms in Silicon Oxynitrides formed by Plasma Nitridation
- Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si
- Reproducible Growth of Metalorganic Chemical Vapor Deposition Derived YBa_2Cu_3O_x Thin Films Using Ultrasonic Gas Concentration Analyzer
- In Situ Growth Monitoring During Metalorganic Chemical Vapor Deposition of YBa_2Cu_3O_x Thin Films by Spectroscopic Ellipsometry
- A Dynamic Analysis of an Adjustable Conveying Machine : Vibration, Control Engineering, Engineering for Industry
- W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
- Atomic-Scale Depth Profiling of Oxides/Si(111) and Oxynitrides/Si(100) Interface
- Influence of Interface Structure on Oxidation Rate of Silicon : Surfaces, Interfaces, and Films