スポンサーリンク
Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan | 論文
- Advantage of Plasma Doping for Source/Drain Extension in Bulk Fin Field Effect Transistor
- Thermal-Annealing Effects on Dopant Redistribution in Nanoscale Si Fin
- Influence of Carbon in In-situ Carbon-Doped SiGe Films on Si(001) Substrates on Epitaxial Growth Characteristics