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Dept. Of Eecs Korea Advanced Institute Of Science And Technology | 論文
- Investigation of Gate Misalignment Effects in FinFETs(Session 7A Silicon Devices IV,AWAD2006)
- Investigation of Gate Misalignment Effects in FinFETs(Session 7A Silicon Devices IV,AWAD2006)
- Novel Structures for a 2-Bit per Cell of Nonvolatile Memory Using an Asymmetric Double Gate(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
- Novel Structures for 2-Bit Per Cell of NVM Using Asymmetric Double Gate (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Novel Structures for 2-Bit Per Cell of NVM Using Asymmetric Double Gate (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A new patterning technique on UV sensitive transparent film with chip embedded photomask (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- A new patterning technique on UV sensitive transparent film with chip embedded photomask (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- A Compact Modeling of Threshold Voltage Shift by a Quantum Confinement Effect in UTB MOSFET (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Compact Modeling of Threshold Voltage Shift by a Quantum Confinement Effect in UTB MOSFET (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Dynamic Downlink Load Control Scheme for WCDMA and HSDPA Systems
- Study on Gate Around Transistor (GAT) Layout for Radiation Hardness(Session9A: Silicon Devices IV)
- Study on Gate Around Transistor (GAT) Layout for Radiation Hardness(Session9A: Silicon Devices IV)
- A Study of LPE HgCdTe Wafer Characteristics Flattened with Single-Point Diamond Turning Method (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Study of LPE HgCdTe Wafer Characteristics Flattened with Single-Point Diamond Turning Method (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Study on Lateral Surface Treatment of the CdTe X-ray image-sensor
- A Study on Lateral Surface Treatment of the CdTe X-ray image-sensor
- 1/f Noise Characteristics of Hydrogenated Long-Wavelength Infrared HgCdTe Photodiode
- A Comprehensive Study of Punchthrough Characteristics in Multiple-Gate MOSFETs--The Trend of Punchthrough Voltages in Various Gate Shapes of SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Comprehensive Study of Punchthrough Characteristics in Multiple-Gate MOSFETs--The Trend of Punchthrough Voltages in Various Gate Shapes of SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- A Comprehensive Study of Hot-Carrier Effects in Body-Tied FinFETs