スポンサーリンク
Department of Information and Communications, K-JIST | 論文
- InGaP/InGaAs p-HEMTs Having Channel Layers Over the Critical Layer Thickness Grown on Patterned GaAs Substrates
- A Depletion-Mode In_Ga_As MOSFET with a Liquid Phase Oxidized Gate
- Reduced Dark Current Characteristics of a Norman-Incident In_Ga_As/GaAs QWIP Employing a p-i-n-i-p Camel Diode Structure