スポンサーリンク
Department of Electronics, Doshisha University, Kyotanabe, Kyoto 610-0321, Japan | 論文
- Photoluminescence Properties Affected by Carrier Transport between X and Different First Excited States Originating from Interface Imperfection in GaAs/AlAs Multi-Quantum Wells
- Effect of Surface and Growth Conditions for Formation of Textured Polycrystalline GaN Crystals by Reactive N2 Plasma