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Department of Electronic Engineering, Chang Gung University | 論文
- Current Transportation Mechanism of HfO_2 Gate Dielectrics with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application
- Nitrogen Induced Extrinsic States (NIES) in Effective Work Function Instability of TiN_x/SiO_2 and TiN_x/HfO_2 Gate Stacks
- Ion Polarity Dependent Voltage Shifts of SiGe Membrane for pH Sensor
- Effect of nano-grain on the memory characteristics of high-κ HfAlO charge trapping layers for nano-scale non-volatile memory device applications
- Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al_2O_3 nanolaminate layers
- Very low voltage operation of p-Si/Al_2O_3/HfO_2/TiO_2/Al_2O_3/Pt single quantum well flash memory devices with good retention
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications
- A Novel High-k Y_2O_3 Sensing Membrane for pH-ISFET
- Time Dependence of Phosphorus Diffusion and Dose Loss during Postimplantation Annealing at Low Temperatures
- Moment Computations of Lumped Coupled RLC Trees with Applications to Estimating Crosstalk Noise(Parasitics and Noise)(VLSI Design and CAD Algorithms)
- Improvement of Al/GaAs Schottky Junction Characteristics Using a Thin Praseodymium Interlayer
- Physical and Electrical Properties of Addition Ti into Er_2O_3 Gate Dielectrics
- Light-Immune pH Sensor with SiC-Based Electrolyte--Insulator--Semiconductor Structure
- GaN Thin Film Based Light Addressable Potentiometric Sensor for pH Sensing Application