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Department of Applied Physics Waseda University | 論文
- Narrow Photoluminescence Spectra in InGaAsP/GaAs (001) LPE Layers Grown in the Immiscible Region
- Photoluminescence of InGaP/GaAs (111) LPE Layers with Elastic Strain due to Lattice Mismatch
- Raman Study of Misfit Strain and Its Relaxation in ZnSe Layers Grown on GaAs Substrates
- Influence of Phosphorus Evaporation from Melt on InGaP/GaAs LPE Growth
- LPE Growth of In_Ga_xAs_P_y with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates
- Photoluminescence Processes of Zn-Doped In_Ga_xP with 0.6
- Electrical Properties of Zn-Doped In_Ga_xP
- Luminescence of Zn Diffused In_ ,Ga_xP in the Direct Transition Region
- Near-Bandgap Photoluminescence in Te-Doped In_Ga_xP (0.2≲x≲0.5)
- PJ-239 Augmented Very low Frequency Components in Sleep Apnea Patients with Chronic Atrial Fibrillation(Autonomic nervous system(04)(H),Poster Session(Japanese),The 72nd Annual Scientific Meeting of the Japanese Circulation Society)
- Improvement of Coupling-Out Efficiency of Organic Light-Emitting Devices by Dot Array Structures with Organic Layer(Fabrication of Organic Nano-devices)(Recent Progress in Organic Molecular Electronics)
- Non-thermal Evidence for Current-Induced Melting of Charge Order in θ-(BEDT-TTF)_2CsZn(SCN)_4
- グラファイト・ナノリボンの電子構造
- グラファイト・ナノクリスタルおよびグラファイト・ナノリボンの作製
- Ni(111)表面上単原子層グラファイトの構造解析
- 3p-J-12 単原子層h-BNに被膜されたNi(111)表面上におけるグラファイト吸着層の成長及び電子状態の観察
- 3a-K-3 Ni(111)表面上のグラファイト及びh-BN単原子層膜の構造解析
- Acceleration of Injected Electron Beam by Ultra-Intense Laser Pulses with Phase Disturbances
- 早稲田大学理工学部応用物理学科 加藤研究室
- Long-term Follow-up of 14 Patients with Philadelphia Chromosome-Positive Acute Lymphoblastic Leukemia following Autologous Bone Marrow Transplantation in First Complete Remission