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Department Of Innovative And Engineered Materials Tokyo Institute Of Technology | 論文
- Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111)
- Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg_Nb_)O_3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition
- Preparation and Structural Analysis of Micro-patterned Pb(Zr,Ti)O_3 Film by Metalorganic Chemical Vapor Deposition
- Fabrication of High Performance Polymeric Microfluidic Device by a Simple Imprinting Method using a Photosensitive Sheet
- Metalorganic Chemical Vapor Deposition of Epitaxial Perovskite SrIrO_3 Films on (100)SrTiO_3 Substrates
- Epitaxial Pt Films with Different Orientations Grown on (100)Si Substrates by RF Magnetron Sputtering
- Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi_2 Thin Film by X-ray Diffraction Measurement
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- Perovskite Single-Phase Growth of Epitaxial Pb(Zn_Nb_)O_3 Films by Alternative-Source-Gas-Introduced Metalorganic Chemical Vapor Deposition
- 室温フェライトめっきによるマグネタイト膜の堆積速度
- フェライトめっき法によるマグネタイト膜の室温合成
- フェライトめっき法によるマグネタイト膜の室温合成
- フェライトめっき法によるマグネタイト膜の室温
- Fe_3O_4電析めっきの浴組成の影響
- Significant Change in In-Plane Magnetic Anisotropy of (Ga, Mn)As Epilayer Induced by Low-Temperature Annealing
- Current-Induced Magnetization Reversal in a (Ga, Mn)As-Based Magnetic Tunnel Junction
- Contribution of Shape Anisotropy to the Magnetic Configuration of (Ga, Mn)As
- Effect of Yttria-Stabilized Zirconia Thickness on Crystal Structure and Electric Property of Epitaxial CeO_2/Yttria-Stabilized Buffer Layer in Metal/Ferroelectric/Insulator/Semiconductor Structure
- Magnetic Anisotropy of Co-substituted Bi-DyAlIG Nanoparticles (特集 磁性材料)
- Ferroelectric Properties of Dysprosium-Substituted Lead Zirconate Titanate Thin Films Fabricated by Chemical Solution Deposition