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Department Of Electronic Engineering Faculty Of Engineering Kyoto University | 論文
- GaN_yAs_Bi_x Alloy Lattice Matched to GaAs with 1.3μm Photoluminescence Emission
- Molecular Beam Epitaxial Growth of Hexagonal CdSe and ZnCdSe on Cubic GaAs(111)B Substrates
- Self-Assembling CdSe, ZnCdSe and CdTe Quantum Dots on ZnSe(100)Epilayers
- Fabrication of CdSe/ZnSe Quantum well Structures on Glass Substrates by Vacuum Evaporation
- Optical Energy Gap of the Mixed Crystal CdS_xTe_
- Phase Diagram of the CdS-CdTe Pseudobinary System
- Conductance Peak at Zero-Bias in Ag-SiO-Bi_2Sr_2CaCu_2O_ Planar Tunnel Junctions
- Coaxial Impact Collision Ion Scattering Spectroscopy Measurements of As/Si(100) Structure Prepared by Ionized Cluster Beam Method
- Magnetohydrodynamic and Tearing Instabilities in a Tokamak
- Molecular Beam Epitaxial Growth of ZnSSe with Hg-Xe Lamp Irradiation
- Nitrogen-Doped ZnSe and ZnSSe Grown by Molecular Beam Epitaxy
- Y-Line Emission and Lattice Relaxation in MBE-ZnSe and -Znsse on GaAs
- Low-Temperature Growth of ZnSe by Photoassisted Molecular Beam Epitaxy
- Photo-Chemical Vapor Deposition of Al_2O_3 Thin Films with High Quantum Yield
- X-Ray Diffraction Study of ZnSe(111) Films Grown on GaAs(111)A Substrates by Molecular Beam Epitaxy
- Improvement in the Crystalline Quality of ZnSe(111) Films Grown by Molecular Beam Epitaxy Using Misoriented GaAs(111)A Substrates
- Li Planar Doping of ZnSe by Molecular Beam Epitaxy
- Stabilization of Resistive Wall Mode Due to Shear Alfven Resonace in a Cylindrical Plasma with a Uniform Longitudinal Flow
- Epitaxial Growth of Cd_xHg_Te
- Acoustoelectric Effect in Se-Te Alloy Crystals at Room Temperature