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Department Of Electrical Engineering Faculty Of Engineering Mie University:changchun Smiconductor Fa | 論文
- Electrical and Photoelectrical Characterization of n・Ga_xAl_Sb-p・GaSb Heterojunction
- Changes of DLTS Spectrum in n-Si due to 7-10 MeV Electron-Irradiation
- Vapor Growth of Te-Doped Ga_xAl_Sb on GaSb
- Vapor-Phase Growth of Te-Doped GaSb