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Department Of Electrical Engineering Faculty Of Engineering Hiroshima University | 論文
- Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
- Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
- Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
- Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
- Response of Unresectable Pancreatic Cancer to Intraoperative Radiotherapy
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
- Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
- Real-Timte Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon
- Fine SiO_2 Pattern Generation by Excimer Laser-Induced Modification of Polysiloxene-Based Thin Films
- Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films
- Exciton Structure in Alkali-Halide Crystals
- Epitaxial Growth of Ba_2YCu_3O_x Thin Film on Epitaxial ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
- Determination of Valence Band Alignment at Ultrathin SiO_2/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy
- Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
- Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
- Preparation of B-Si-Ge Alloys by Sputter-Assisted-Plasma CVD
- Changes of Structural, Electrical, and Optical Properties of Microcrystalline Si_xGe_ Films by Annealing
- Electronic Properties of Post-Hydrogenated Lightly-Boron-Doped CVD Amorphous Silicon