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Daimler-Benz Research Center Ulm | 論文
- In_Al_AS/In_xGa_As (0.53
- Breakdown Mechanisms in Pseudomorphic InAlAs/In_xGa_As High Electron Mobility Transistors on InP. II : On-State
- Breakdown Mechanisms in Pseudomorphic InAlAs/In_xGa_As High Electron Mobility Transistors on InP. I: Off-State
- Low-Power Consumption InGaAs PIN Diode Switches for V-band Applications
- Analytical Model to Determine the Gate Leakage Current in In_Al_AS/In_xGa_As Pseudomorphic Modulation Doped Field-Effect Transistors Caused by Thermionic Field Emission