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Central Research and development Division, UMC | 論文
- A Novel Explanation of Power-Law Model with Quantitative Hydrogen Mechanism for Ultra-Thin Oxide Breakdown
- A Novel Explanation of Substrate Bias Dependent Dielectric Breakdown Behavior with Channel Quantization Effect in Ultrathin Oxide pMOSFETs
- Si Substrate Orientation Induced Worse Hot Carrier Degradation in Novel (110)/ Oriented Devices