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CCRAST, Nagoya University | 論文
- Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Measurement of Einstein's A Coefficient of the 296.7 nm Transition Line of the Carbon Atom
- Simulation of Thermomagnetic Recording Process for High Density Magnetic Field Modulation Method(Selected papers from MORIS 2006 Workshop on Thermal & Optical Magnetic Materials and Devices)
- Perpendicular Magnetic Anisotropies and Kerr Spectra of (Cr_V_x)Pt_3 Ordered Alloy Films(Magnetism and Spin Dynamics)
- Simulation of Thermomagnetic Recording Process Using MFM Method : Effect of Field Gradient(Magneto-optical and Hybrid Recording)