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Basic Research Laboratory Electronics And Telecommunications Research Institute (etri) | 論文
- Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge_2Sb_2Te_5
- Dry Etching of Ge_2Sb_2Te_5 Thin Films into Nanosized Patterns Using TiN Hard Mask
- Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
- Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
- Phase Formations and Electrical Properties of Bi_La_Ti_3O_ and Sm-Doped Bi_La_Sm_Ti_3O_ Thin Films with Annealing Temperature
- Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi, La)_4Ti_3O_12/ONO/Si Structures
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)4Ti3O12/HfO2 Structure (先端デバイスの基礎と応用に関するアジアワークショップ)
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)_4 Ti_3O_/HfO_2 Structure (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Electrical characterization of nonvolatile phase-change memory devices using Sb-rich Ge-Sb-Te alloy films
- Nanolaminated Ta_2O_5-Al_2O_3 Insulator Effect on Luminescent and Electrical Properties of Thin-Film Electroluminescent Devices
- Significance of Gate Oxide Thinning below 1.5nm on 1/f Noise Behavior in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Electrical Stress
- Crystallographic Orientations and Electrical Properties of Bi_La_Ti_3O_ Thin Film on Pt/Ti/SiO_2/Si and Pt/SiO_2/Si Substrates
- Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
- Phase Formations and Electrical Properties of Bi3.15La0.85Ti3O12 and Sm-Doped Bi3.073La0.85Sm0.077Ti3O12 Thin Films with Annealing Temperature
- Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures
- Significance of Gate Oxide Thinning below 1.5 nm on $1/ f$ Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress
- Crystallographic Orientations and Electrical Properties of Bi3.47La0.85Ti3O12 Thin Films on Pt/Ti/SiO2/Si and Pt/SiO2/Si Substrates