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A.f. Ioffe Physical-technical Institute Of The Russian Academy Of Sciences | 論文
- Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (j_=11 A/cm^2, λ=1.9μm (77 K))
- Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser ( Quantum Dot Structures)
- Vertically Coupled Quantum Dot Lasers : First Device Oriented Structures with High Internal Quantum Efficiency ( Quantum Dot Structures)
- InAs-GaAs Quantum Pyramid Lasers:In Situ Growth, Radiative Lifetimes and Polarization Properties
- InAs-GaAs Quantum Dot Lasers : in Situ Growth, Radiative Lifetimes and Polarization Properties