Kobayashi Tsuyoshi | Power Supply Materials & Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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- Power Supply Materials & Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japanの論文著者
Power Supply Materials & Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan | 論文
- Crystal Growth and Dielectric Properties of Solid Solutions of Pb(Yb_Nb_)O_3-PbTiO_3 with a High Curie Temperature near a Morphotropic Phase Boundary
- Growth, Electric and Thermal Properties of Lead Scandium Niobate-Lead Magnesium Niobate-Lead Titanate Ternary Single Crystals
- Large Piezoelectric Constant of High-Curie-Temperature Pb(In_Nb_)O_3-Pb(Mg_Nb_)-PbTiO_3 Ternary Single Crystal near Morphotropic Phase Boundary
- Temperature Dependence of Piezoelectric Properties of a High Curie Temperature Pb(In_Nb_)O_3-PbTiO_3 Binary System Single Crystal near a Morphotropic Phase Boundary
- Dielectric and Piezoelectric Properties of 0.93Pb(Zn_Nb_)O_3-0.07PbTiO_3 Piezoelectric Single Crystals for Medical Array Transducers