堀地 俊昭 | (株)東洋ラジエーター技術研究所(257神奈川県秦野市曽屋937)
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概要
論文 | ランダム
- Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal
- Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow Shallow Trench Isolation
- Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow STI
- Highly Uniform Deposition of LP-CVD 3i3N4 Films on Tungsten for Advanced Low Resistivity "Poly-Metal" Gate Interconnects
- Capillary Wave Propagation on Water Covered with Polyamic Acid Monolayer Films