Nakamura Takao | Sumitomo Electric Industries, Ltd. Semiconductor R&D Laboratories, 1-1-1 Koyakita, Itami, Hyogo 664-0016, Japan
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Sumitomo Electric Industries, Ltd. Semiconductor R&D Laboratories, 1-1-1 Koyakita, Itami, Hyogo 664-0016, Japan | 論文
- High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
- High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
- Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack
- Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes