Nishibe Sansei | Faculty of Pharmacy, Higashi Nippon Gakuen University
スポンサーリンク
概要
論文 | ランダム
- 1.マルチゲートFinFETのシミュレーション(32nm世代VLSIを担うMore Moore技術-三次元ゲートMOSFET-)
- 4端子型FinFETを用いた簡素化論理ゲートの構成
- Investigation of body bias dependence of gate-induced drain leakage current for body-tied fin field effect transistor
- A novel body-tied fin field effect transistor flash memory structure with λ-shaped floating gate for sub 45nm NOR flash memory
- Comparative study of p[+]/n[+] gate modified saddle metal oxide semiconductor field effect transistors and P[+]/n[+] gate bulk fin field effect transistors for sub-40nm dynamic random access memory cell transistors