Kim Kyong-Min | Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Ichon-si, Kyoungki-do 476-701, Korea

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• Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Ichon-si, Kyoungki-do 476-701, Koreaの論文著者

Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Ichon-si, Kyoungki-do 476-701, Korea | 論文

• Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium

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