Nakayama Masatoshi | Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan
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- 同名の論文著者
- Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japanの論文著者
Information Technology R&D Center, Mitsubishi Electric Corporation, Kamakura, Kanagawa 247-8501, Japan | 論文
- Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation
- Analysis of On-State Gate Current of AlGaN/GaN High-Electron-Mobility Transistor under Electrical and Thermal Stresses