Lee Nae-In | Advanced Process & Development TEAM, System LSI Division & 3Technology & Development TEAM, Samsung Electronics Co., Ltd., San#24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, Korea

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• Advanced Process & Development TEAM, System LSI Division & 3Technology & Development TEAM, Samsung Electronics Co., Ltd., San#24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, Koreaの論文著者

Advanced Process & Development TEAM, System LSI Division & 3Technology & Development TEAM, Samsung Electronics Co., Ltd., San#24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, Korea | 論文

• Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal–Oxide–Semiconductor Capacitor

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